CHEMICAL ADDITIVES FOR IMPROVED COPPER CHEMICAL-VAPOR-DEPOSITION PROCESSING

Techniques for improved copper chemical vapour deposition (CVD) proces sing by the addition of trimethylvinylsilane (tmvs) and hexafluoroacet ylacetone (Hhfac) during copper deposition from the volatile liquid pr ecursor Cu(hfac)(tmvs) are described. The tmvs enables stable high vap orization rates of precursor by direct liquid injection and the Hhfac permits higher deposition rates of smoother copper films. The resistiv ity of the copper films averages approximately 1.8 mu Omega cm as depo sited. Combined together, these results mark an important advance towa rd a manufacturable copper CVD process.