The interactions of Cu(II) bishexafluoroacetylacetonate (Cu-II(hfac)(2
)) with polycrystalline Ta surfaces under ultrahigh vacuum conditions
are reported here for temperatures between 115 and 1000 K. Cu-II(hfac)
(2) adsorbed at 115 K is reduced to Cu(O) by 450 K without the use of
an external reducing agent. The reduction occurs without disproportion
ation of Cu(I) intermediates. This behavior is unique to Ta and differ
s sharply from reported results for TiN or other metallic substrates.
The Cu overlayer is stable on the Ta surface to 750 K. Between 750 and
950 K a decrease in Cu intensity is observed which becomes more prono
unced above 950 K. This decrease in Cu intensity is due to diffusion o
f Cu into the Ta substate.