TUNNELING THROUGH NARROW-GAP SEMICONDUCTOR SB2TE3 BARRIER

Tunnel experiments have been performed on Au/Sb2Te3/Al tunnel junction s to study elastic interelectrode tunneling through the small energy g ap of a narrow-gap semiconductor. Tunnel conductance exhibited narrow width conductance peak at zero bias voltage. This behaviour is in acco rdance with the result of the theoretically calculated tunnel conducta nce, in which the nonparabolic dispersion relation within the energy g ap of the narrow-gap semiconductor used as a tunnel barrier in a metal /narrow-gap semiconductor/metal tunnel structure is included. And some interesting structures are also observed in the conductance curves.