Auger electron spectroscopy has been used to monitor the uptake of nit
rogen at both clean and sodium covered Si(100) surfaces after exposure
to helium seeded and unseeded beams of nitrogen. Nitridation of the c
lean Si(100) surface occurs only at surface temperatures in excess of
450 K and the rate of reaction then shows a strong dependence on the t
ranslational energy of the incident N-2 molecule. By contrast nitrogen
reacts with a sodium covered surface at 300 K to form both a nitride,
SiNx, and a nitrogen surface complex which partly converts to nitride
on heating. Scattering of nitrogen from the clean (sodium-free) silic
on surface occurs as a broad, specular lobe but, when sodium is presen
t, there is additional diffuse scattering which is thought to arise fr
om a weakly held NaN3 complex which readily desorbs at 300 K.