CHEMICAL-STATE-SPECIFIC LOW-ENERGY PHOTOELECTRON DIFFRACTION ON III-VSEMICONDUCTORS

A theoretical photoelectron diffraction (PD) study was performed on th e (110) surface of III-V semiconductors like InSb, GaSb, InP, GaP, InA s and GaAs at low photon energies (40-90 eV) in order to probe the inf luence of the scattering properties of the different atoms in these se miconductors as well as that of the geometric structure. The atoms at the surface are chemically different from their bulk counterparts and by achieving the photoelectron diffraction intensities from each one, it is possible to probe independently the structural environment aroun d each atomic species. In a photoemission experiment as a consequence of high surface sensitivity and overall experimental resolution the co re-level peaks can be decomposed into bulk acid surface components. As an example experimental and theoretical photoelectron diffraction dat a for InP(110) are compared to find out the sensitivity of the PD patt ern to the structural parameters.