T. Chasse et al., SULFURIZATION OF INP(001) SURFACES STUDIED BY X-RAY PHOTOELECTRON ANDX-RAY-INDUCED AUGER-ELECTRON SPECTROSCOPIES (XPS XAES)/, Surface science, 333, 1995, pp. 434-440
Surface chemistry of n- and p-doped InP(001) after treatment with sulf
ur from different sources has been investigated by XPS/XAES measuremen
ts. Core level lines, valence band spectra and Auger transitions were
related to changes in surface chemistry and band bending. Both high re
solution chemical shifts and the Auger parameter concept were used for
the identification of chemical species. Sulfurization was performed b
y dipping the chemically cleaned sample into a (NH4)(2)S solution or b
y exposing it to S-2 or H2S molecules in UHV. Depending on the source
and on the annealing temperature several sulfur compounds were observe
d on the surface and identified as sulfides with sulfur substituting p
hosphorus or with sulfur as surface atom, and as polysulfide probably
with one sulfur atom in a terminal position. Changes of surface Fermi
energy position and thus band bending were investigated.