INVESTIGATION OF THE AS INP(110) INTERFACE BY HIGH-RESOLUTION PHOTOEMISSION/

A photoemission study was performed in order to investigate the intera ction of arsenic with InP(110) at room temperature. Formation of a sat urated layer of As has been observed, which consists of two different species of As. The adsorbed layer is stable during annealing to temper atures up to 250 degrees C. Annealing to higher temperatures is accomp anied by both a significant loss of arsenic from the surface due to de sorption and partial incorporation into surface sites of the substrate . The electronic structure of the annealed surface is hardly affected, although As has been incorporated into the semiconductor. The results are discussed in comparison with recent experimental and theoretical investigations.