ADSORPTION OF BISMUTH ON SI(001) STUDIED BY AES, REELS AND MASS-SPECTROMETRY

Authors
KOVAL IF MELNIK PV NAKHODKIN NG PYATNITSKY MY AFANASIEVA TV
Citation
If. Koval et al., ADSORPTION OF BISMUTH ON SI(001) STUDIED BY AES, REELS AND MASS-SPECTROMETRY, Surface science, 333, 1995, pp. 585-589
Citations number
10
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
333
Year of publication
1995
Part
A
Pages
585 - 589
Database
ISI
SICI code
0039-6028(1995)333:<585:AOBOSS>2.0.ZU;2-O
Abstract
The morphology of bismuth layers on Si(001) has been investigated by e lectron spectroscopy methods (AES, EELS) and thermodesorption mass-spe ctrometry. Island formation on the first Bi continuous monolayer occur s during bismuth deposition at room temperature. The thermodesorption of this system at a temperature of similar to 500 degrees C leads to t he formation of at least one stable adsorbed Bi phase with a coverage of similar to 0.6-0.7 ML. Bi O-4.5-line REELS of the Bi/Si(001) system has demonstrated the covalent character of the Bi-Si bond.