THE EPITAXIAL-GROWTH OF CU ON SI(111)7X7 - A RHEED STUDY

We investigated the morphological and structural changes that occur du ring the growth of Cu on Si(111)(7 x 7) at different substrate tempera tures using reflection high energy electron diffraction (RHEED). For t emperatures up to 100 degrees C Cu grows in a layer-by-layer like fash ion as indicated by the observation of RHEED intensity oscillations. T he interface is intermixed, but only for growth above -50 degrees C we found evidence for the formation of eta-Cu3Si. Above 150 degrees C th e oscillations disappear and the growth proceeds in the Stranski-Krast anov mode producing a very rough surface.