ION CHANNELING

Since the first channelling experiments were performed in 1963 by Davi es and his co-workers the technique has been combined with many method s like Rutherford backscattering spectrometry, particle induced x-ray emission and on-line nuclear reaction to localize trace elements in cr ystals or to determine crystalline quality. The ratios of channelled t o random stopping powers of silicon for irradiation in the [100] direc tion have been investigated and compared to the available theoretical results. We shall describe some applications of ion channelling in the field of materials characterization. Special attention is given to io n channelling combined with charged particle activation analysis for s tudying the behaviour of oxygen atoms in Czochralski-grown silicon lat tices.