MEMORY SWITCHING CHARACTERISTICS OF IN2SE3 AMORPHOUS THIN-FILMS

Authors
AFIFI MA LABIB HH HEGAB NA FADEL M BEKHEET AE
Citation
Ma. Afifi et al., MEMORY SWITCHING CHARACTERISTICS OF IN2SE3 AMORPHOUS THIN-FILMS, Indian Journal of Pure & Applied Physics, 33(3), 1995, pp. 129-134
Citations number
NO
Categorie Soggetti
Physics
Journal title
Indian Journal of Pure & Applied Physics → ACNP
ISSN journal
00195596
Volume
33
Issue
3
Year of publication
1995
Pages
129 - 134
Database
ISI
SICI code
0019-5596(1995)33:3<129:MSCOIA>2.0.ZU;2-X
Abstract
Electrical studies performed on films on In2Se3 compound exhibits non- linear I-V characteristics and switching phenomenon The threshold volt age increases linearly with increasing film thickness while decreases exponentially with increasing temperature. The rapid transition betwee n the highly resistive and conductive state was attributed to an elect rothermal model initiated from Joule heating of a current channel.