ANNEALING BEHAVIOR OF 1 MEV HYDROGEN-IMPLANTED LEC GROWN INP[100]

Authors
AROKIARAJ J ARULKUMARAN S DHARMARASU N KUMAR J
Citation
J. Arokiaraj et al., ANNEALING BEHAVIOR OF 1 MEV HYDROGEN-IMPLANTED LEC GROWN INP[100], Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 101(3), 1995, pp. 240-242
Citations number
10
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
101
Issue
3
Year of publication
1995
Pages
240 - 242
Database
ISI
SICI code
0168-583X(1995)101:3<240:ABO1MH>2.0.ZU;2-#
Abstract
Hydrogen has been implanted in InP crystals at energy 1 MeV with fluen ce 1 x 10(14) cm(-2). Structural and electrical analyses were carried out on the implanted samples. Implanted samples have also been examine d after furnace annealing. The microhardness of the implanted samples decreases with increase in annealing temperature. From Hall effect stu dies the carrier mobility of the implanted samples was found to decrea se with increase in annealing temperature. The change in electrical be haviour is due to the formation of a neutral complex involving hydroge n and the donor atom.