ALTERNATING SPUTTERED AL-MO DEPOSITS AND THEIR INTERACTION WITH A AU TOP LAYER

Authors
Citation
Kl. Lin et al., ALTERNATING SPUTTERED AL-MO DEPOSITS AND THEIR INTERACTION WITH A AU TOP LAYER, Thin solid films, 263(1), 1995, pp. 85-91
Citations number
10
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
263
Issue
1
Year of publication
1995
Pages
85 - 91
Database
ISI
SICI code
0040-6090(1995)263:1<85:ASADAT>2.0.ZU;2-0
Abstract
A-Mo deposits were prepared with alternating sputtering using separate Al and Mo targets. The relative compositions of the binary films were found to be linearly proportional to the Al/Mo power ratio. The micro structure, detected with X-ray diffraction, of the as-deposited films were observed to be the Al, Mo and amorphous phases, depending on the relative atomic ratio of Al/Mo. Transmission electron microscopy diffr action patterns indicated that the films were not uniform in structure . The crystallization behavior of the amorphous deposits was found to be influenced by the Al/Mo atomic ratio of the deposit. A higher Al co ntent lowered the crystallization temperature of the deposits. The as- deposited amorphous films reacted with a Au top layer right upon depos ition. However, the conversion of the Al-Mo deposits to a correspondin g compound will raise the interaction temperature.