RELATIONS BETWEEN STRUCTURAL AND ELECTRONIC-PROPERTIES OF SNO2 POLYCRYSTALLINE THIN-FILMS PREPARED BY THE AEROSOL MOCVD TECHNIQUE

Citation
Ai. Ivashchenco et al., RELATIONS BETWEEN STRUCTURAL AND ELECTRONIC-PROPERTIES OF SNO2 POLYCRYSTALLINE THIN-FILMS PREPARED BY THE AEROSOL MOCVD TECHNIQUE, Thin solid films, 263(1), 1995, pp. 122-126
Citations number
15
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
263
Issue
1
Year of publication
1995
Pages
122 - 126
Database
ISI
SICI code
0040-6090(1995)263:1<122:RBSAEO>2.0.ZU;2-I
Abstract
Thin polycrystalline films of undoped SnO2 have been prepared by aeros ol metal-organic chemical vapour deposition on single-crystal MgO(100) and glass ceramic substrates at deposition temperatures T-s = 300-800 degrees C. From electrical and X-ray diffraction measurements, the ef fect of substrate nature and T-s on the electronic and structural para meters was studied. The size of crystalline grains and their bulk elec trophysical characteristics were weakly dependent on the substrate nat ure and T-s. At the same time, preferential grain orientation and subs equently film texture character were determined by the above-mentioned factors. The observed behavior of the film's electrical properties an d gas sensitivity was attributed to a variation of texture character.