IMPROVED ALGAINP-BASED RED (670-690 NM) SURFACE-EMITTING LASERS WITH NOVEL C-DOPED SHORT-CAVITY EPITAXIAL DESIGN

A modified epitaxial design leads to straightforward implementation of short (1 lambda) optical cavities and the use of C as the sole p-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate c ontinuous wave at room temperature at wavelengths between 674 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold vo ltage of 2.2 V, and peak wallplug efficiency of 9%. These values are a ll significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improv ed performance is due primarily to reduced optical losses and improved current constriction and dopant stability. (C) 1995 American Institut e of Physics.