PREPARATION OF NITROGEN-CONTAINING CARBON-FILMS USING CHEMICAL-VAPOR-DEPOSITION ENHANCED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA

A chemical vapor deposition apparatus enhanced by electron cyclotron r esonance plasma was employed to deposit nitrogen containing carbon fil ms. In the apparatus, negative de bias voltage was applied to the subs trate for acceleration of positive ions toward the substrate. The depo sition rate and nitrogen content of the film was found to be mainly de pendent upon the deposition conditions. Although a large N-2 flow rate and bias voltage contribute to inhibit film growth through surface sp uttering of the substrate, an optimum [N-2]/([CH4]+[N-2]) flow rate of 0.67 and a bias voltage of 50 V promote nitrogen implantation into th e growing films through possible nitrogen ion bombardment. (C) 1995 Am erican Institute of Physics.