IMPLANTATION-INDUCED DOPANT DIFFUSION IN THE FRAMEWORK OF THE DROPLETMODEL OF STRUCTURAL DISORDER

A model for the annealin,g of implantation-induced structural disorder is proposed. The phenomenon is treated on the basis of a physical ana logy between point defect cluster formation/dissolution in a crystal a nd droplet condensation/evaporation in a saturated vapor. Explicit rel ationships are obtained for diffusion broadening and drift of the dopa nt profile upon disorder annealing. The predictions of the droplet mod el are compared with experimental data on boron in silicon and are fou nd to be accurate better than within a factor of 2 in the temperature range 800-1050 degrees C. (C) 1995 American Institute of Physics.