GROWTH AND CHARACTERIZATION OF AN EPITAXIALLY GROWN ZNSSE MNZNSSE DISTRIBUTED-BRAGG-REFLECTOR/

A Bragg reflector consisting of a 25-period MnZnSSe/ZnSSE Bragg stack is reported. The II-VI semiconductor structure was grown by molecular beam epitaxy on a GaAs (100) epilayer. Structural characterization of the Bragg reflector was performed with double crystal x-ray diffractio n and transmission electron microscopy. These studies indicated that t he epitaxial II-VI structure, whose total thickness is about 2150 nm, remains pseudomorphic with the GaAs substrate. The Bragg stack has a m aximum reflectance of 81% at 468 nm. This result shows that fabricatio n of high reflectance mirrors from epitaxial ZnSe-based II-VI compound s is possible in spite of relatively small refractive index difference s between constituent II-VI layers. (C) 1995 American Institute of Phy sics.