GROWTH AND CHARACTERIZATION STUDIES OF FE4N THIN-FILMS PREPARED BY ION-BEAM-ASSISTED EVAPORATION

Authors
CHATBI H VERGNAT M BAUER P MARCHAL G
Citation
H. Chatbi et al., GROWTH AND CHARACTERIZATION STUDIES OF FE4N THIN-FILMS PREPARED BY ION-BEAM-ASSISTED EVAPORATION, Applied physics letters, 67(3), 1995, pp. 430-432
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
3
Year of publication
1995
Pages
430 - 432
Database
ISI
SICI code
0003-6951(1995)67:3<430:GACSOF>2.0.ZU;2-5
Abstract
Thin films of iron nitrides have been prepared using an ion beam assis ted evaporation method. X-ray diffraction and Mossbauer spectrometry s how that the films generally consist in a mixture of Fe and Fe4N phase s. For high source powers and temperatures higher than 300 degrees C i t was possible to obtain the pure Fe4N phase. (C) 1995 American Instit ute of Physics.