INTERACTION OF OXYGEN WITH (ER- FORMATION OF ERBIUM PYROSILICATE ER2SI2O7(SI) )

Silicon oxide (SiOx) and erbium oxide (ErOx) layers in the form of SiO x/ErOx/SiOx/Si structures were sequentially deposited onto silicon sub strates by reactive RF-sputtering without breaking the vacuum. The str uctures were subsequently heat treated at 800 degrees C under an argon pressure of 10(-3) mbar. XPS measurements revealed that the layers th us obtained are homogeneous. The relative intensities of the Si2p, Er4 d and O 1s core level peaks suggest a Er:Si:O composition ratio equal to 2:2:7, Furthermore, the chemical shifts observed for the Si2p and E r4d peaks showed the formation of a compound in which silicon (Si) and erbium (Er) are, respectively, in tetrahedral and octahedral oxygen e nvironments. XRD measurements showed the formation of erbium pyrosilic ate (Er2Si2O7) which is consistent with the XPS results.