IR LASER-INDUCED CVD OF SIO2 PHASES FROM TRIETHOXYSILANE AND TETRAETHOXYSILANE

CO2 laser induced decomposition of triethoxysilane and tetraethoxysila ne in the gas phase affords a number of gaseous products and SiO2 film s that incorporate all the silicon from the parent compounds. The proc ess has been examined in batch and flow reactors at different temperat ures of substrates to assess its potential for CVD of SiO2. FTIR and X PS analysis of the films reveals a small contamination by H and C, whi ch decreases with increasing substrate temperature. The occurrence of elemental silicon in the SiO2 films produced from triethoxysilane refl ects a hitherto unobserved mode of Si formation.