This review is focussed on the most demanding application of dielectri
cs in microelectronics, namely that in field effect technology. It is
shown that the requirements of this technology can only be met in sili
con devices; the developments over the past 30 years indicate that the
re is no reliable replacement for Si-SiO2 in the gate system. However,
for DRAM capacitors the use of alternative dielectrics with higher di
electric constant and of ferroelectrics turns out to be unavoidable bu
t also manageable. The limitations of other semiconductor systems with
regards to dielectrics are briefly reviewed.