Buried oxides in semiconductors (so-called BOX) demonstrate a large fl
exibility of applications, not only in the domain of pure electronic c
ircuits, but also in new areas such as integrated optoelectronics, mic
romachining and sensors. This is mainly due to the variety of dielectr
ic properties that can play electrical as well as mechanical roles and
can act as a buffer layer. Compound structures containing a buried in
sulator or buried oxide are most of the time identified as silicon-on-
insulator (SOI), or more generally semiconductor-on-insulator instead
of BOX. This paper briefly covers the roots of the concepts, and class
ifies and depicts the techniques used to investigate SOI as well as th
eir main applications over the past 60 years.