BURIED OXIDES - WHERE WE HAVE BEEN AND WHERE WE ARE GOING

Authors
Citation
Jl. Leray, BURIED OXIDES - WHERE WE HAVE BEEN AND WHERE WE ARE GOING, Journal of non-crystalline solids, 187, 1995, pp. 10-22
Citations number
68
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
187
Year of publication
1995
Pages
10 - 22
Database
ISI
SICI code
0022-3093(1995)187:<10:BO-WWH>2.0.ZU;2-T
Abstract
Buried oxides in semiconductors (so-called BOX) demonstrate a large fl exibility of applications, not only in the domain of pure electronic c ircuits, but also in new areas such as integrated optoelectronics, mic romachining and sensors. This is mainly due to the variety of dielectr ic properties that can play electrical as well as mechanical roles and can act as a buffer layer. Compound structures containing a buried in sulator or buried oxide are most of the time identified as silicon-on- insulator (SOI), or more generally semiconductor-on-insulator instead of BOX. This paper briefly covers the roots of the concepts, and class ifies and depicts the techniques used to investigate SOI as well as th eir main applications over the past 60 years.