OXIDATION OF AMORPHOUS AND CRYSTALLINE SILICON

The oxidation of c-Si and a-Si:H in dry O-2 and in H2O steam at temper atures ranging from 800 to 1060 degrees C is studied. it is shown that the oxide grows on a-Si:H film linearly with time, while its growth o n c-Si obeys the linear-parabolic law. The nature and magnitude of the oxide stress depend on the oxidizing material and the oxidation condi tions. It is suggested that the observed oxide stress behavior is rela ted to the different types of hydrogenous species and to the differenc e in the structure of the oxidizing material.