DUAL-MODE RADIO-FREQUENCY MICROWAVE PLASMA DEPOSITION OF AMORPHOUS-SILICON OXIDE THIN-FILMS

A new dual-plasma (surface wave-coupled microwave and capacitively-cou pled radio frequency) plasma enhanced chemical vapor deposition reacto r for high growth rate deposition of amorphous insulating alloys has b een developed. A high degree of flexibility for thin film material syn thesis is expected, because the energy of the ion bombardment can be c ontrolled independently of the microwave plasma chemistry. In situ spe ctroscopic ellipsometry is used for the optimization of the dual-mode plasma deposition of hydrogenated silicon oxides a-SiOx:H (with 0 less than or equal to x less than or equal to 2) providing monitoring of t he index of refraction and deposition rate. A new procedure for the re al-time calculation of both parameters is reported. The growth rate of nearly stoichiometric oxides increases as a function of the oxygen ho w rate with a maximum value of 33 Angstrom s(-1) using a 315 W microwa ve power.