IR STUDY OF SHORT-RANGE AND LOCAL ORDER IN SIO2 AND SIOX FILMS

The structure of vitreous SiO2 and SiOx films has been studied using I R-spectroscopy, gravimetry and computer modeling. Deconvolution of the silicon-oxygen stretching band into Gaussian profiles is carried out, the main parameters of elementary vibrational bands are determined an d the corresponding Si-O-Si bond angles are calculated. Comparison of these data with oxide density and with the results of computer simulat ion of the silica structure in the context of the random bonding model enables definite conclusions on the nature of the fundamental structu ral composition of SiO2 and SiOx films to be made.