PARAMETERS CONTROLLING THE GENERATION OF NATURAL INTRINSIC EX DEFECTSIN THERMAL SIO2 ON SI

A K-band electron spin resonance study of the appearance of the natura l intrinsic EX center in dry and wet thermal (001) and (111)Si/SiO2 is presented. In order to isolate the key parameter(s) responsible for E X generation, the oxidation growth conditions, together with substrate characteristics, are systematically varied over broad ranges, reveali ng that the grown oxide thickness is the sole physical quantity determ ining the areal defect density. SiO2 etchback experiments in combinati on with accurate stylus profilometry are used to determine the spatial location and volume concentration of the EX defects, The center's the rmochemical properties are investigated through alternated isochronal anneals in vacuum and H-2 ambient, The EX generation is interpreted in terms of O enrichment in combination with the aspect of gradual struc tural relaxation of the SiO2 layer.