INSTABILITY OF CHARGED DEFECTS IN ELECTRICALLY STRESSED METAL-TUNNEL OXIDE-SILICON DIODES

Authors
LUNDGREN P ANDERSSON MO FARMER KR ENGSTROM O
Citation
P. Lundgren et al., INSTABILITY OF CHARGED DEFECTS IN ELECTRICALLY STRESSED METAL-TUNNEL OXIDE-SILICON DIODES, Journal of non-crystalline solids, 187, 1995, pp. 140-143
Citations number
23
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
187
Year of publication
1995
Pages
140 - 143
Database
ISI
SICI code
0022-3093(1995)187:<140:IOCDIE>2.0.ZU;2-E
Abstract
The results of a study of the stability of electrical stress-induced p ositive charge in aluminum gate metal-tunnel oxide-silicon diodes expo sed to various temperature and bias treatments are presented. It is fo und that the electrical stress-induced charge relaxes over time, being neutralized in a manner that is dependent both on the ambient tempera ture and on the mean oxide field, suggesting that the stress-induced o xide charge can communicate with free carriers via activated tunneling .