INFLUENCE OF FN ELECTRON INJECTIONS IN DRY AND DRY WET DRY GATE OXIDES - RELATION WITH FAILURE

The resistances of dry and dry/wet/dry gate oxides to Fowler-Nordheim injections are compared. Two types of test MOS capacitors were used in order to verify whether a simplified process can lead to reliable res ults. A dry/wet/dry oxide exhibits higher injected charge to intrinsic breakdown and smaller density of net effective trapped charge than a dry oxide does. The interface state generation rates are identical for both oxides. The improvement is attributed to higher electron trappin g in dry/wet/dry oxide.