MODELING AND SIMULATION OF HOMOGENEOUS DEGRADATION FOR N-CHANNEL MOSFETS

In this work, the effects of the degradation generated by homogeneous hot-electron injection in a one-dimensional model of current-voltage c haracteristics for short-channel MOSFETs are introduced. A distributed charge model, implemented in the SABER simulator is used. Simulation results obtained for n-MOS transistors demonstrate good agreement with the experimental data for interface state density inferior to 3x10(11 )cm(-2)eV(-1). The samples are degraded by homogeneous electron photoi njection and the interface trap density is performed by the pumping ch arge method.