COMPARISON OF X-RAY-INDUCED ELECTRON AND HOLE TRAPPING IN VARIOUS MATERIALS (YSZ, SIMOX, THERMAL SIO2)

Charge trapping after X-ray irradiation has been studied in various ma terials, such as thermally grown SiO2, ion-implanted SiO2 (SIMOX proce ss), and yttria stabilized zirconia (YSZ). The charge trapping charact eristics are investigated by studying both the dose and applied field dependences. The results show a significant difference between X-ray r adiation response of YSZ and SiO2-based materials. Both hole and elect ron trapping occur in YSZ in a nearly symmetrical manner, even after a low dose irradiation. In SiO2-based samples, hole trapping is dominan t, although electron trapping is observed in SIMOX materials irradiate d at high dose.