LEAKAGE CURRENT REDUCTION DUE TO HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

As is well known, the application of gate-voltage stresses in conjunct ion with high source-drain voltages, V-ds, modifies the electrical cha racteristics of polycrystalline silicon thin film transistors. In part icular negative gate-voltage stresses on n-channel devices usually red uce both the leakage current and the transconductance. In this paper a complete analysis of hot carrier effects induced by different gate-bi as stresses at high V-ds is presented and discussed in terms of trap a nd interface state creation. It is shown that in certain stress regime s the leakage current can be reduced without the accompanying transcon ductance degradation.