THE MICROSCOPIC NATURE OF DONOR-TYPE SI-SIO2 INTERFACE STATES

Authors
DRUIJF KG DENIJS JMM VANDERDRIFT E AFANASEV VV GRANNEMAN EHA BALK P
Citation
Kg. Druijf et al., THE MICROSCOPIC NATURE OF DONOR-TYPE SI-SIO2 INTERFACE STATES, Journal of non-crystalline solids, 187, 1995, pp. 206-210
Citations number
11
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
187
Year of publication
1995
Pages
206 - 210
Database
ISI
SICI code
0022-3093(1995)187:<206:TMNODS>2.0.ZU;2-7
Abstract
Donor-type interface states, generated by vacuum ultraviolet irradiati on have been studied. They anneal at room temperature but only when in a neutral state. This anneal is accompanied by the release of atomic hydrogen. It is proposed that the states are formed by H loosely bonde d to sites in the SiO2 network at or near the interface. Anneal would take place by removal of H. Capturing a hole would strengthen the bond between H and the network site.