THE NO-THERMAL ACTIVATION OF THE DEFECT GENERATION MECHANISM IN A MOSSTRUCTURE

The oxide positive charge and the interface-state formation caused by a negative gate bias in a polycrystalline silicon gate-oxide-semicondu ctor capacitor versus injecting temperature in the range of 77-400 K i s studied. It is found that the generation of both interface-states an d oxide charge is temperature independent which indicates that the mot ion of each mobile species (as the hydrogen-related species) must be e xcluded. The formation of interface-states is linked to the break of S i-Si or Si-O distorted bonds at the Si/SiO2 interface, and the generat ion of the oxide positive charge to the electron-emission from pre-exi sting or created neutral traps.