THE ROLE OF HYDROGEN IN THE ACTION OF FLUORINE IN SI SIO2 STRUCTURES/

The effect of hydrogen exposure and subsequent annealing of F-implante d oxides on the generation of donor-type Si/SiO2 interface states was studied. F appears to reduce the amount of H in the oxide, which other wise is instrumental in producing these hydrogen-related states. This elimination of hydrogen is of catalytic nature; formation of the mobil e species HF is suggested. Confinement of these F species by the gate is essential to prevent their escape from the oxide.