Recent studies involving hydrogen and its compounds in the Si/SiO2 sys
tem are examined as a basis for a comprehensive model of hydrogen phys
ical chemistry in the system. A model will require resolution of contr
adictions among experimental findings on passivation of P-b centers, r
adiation damage mechanisms, diffusion, and physisorption and chemisorp
tion in the SiO2 lattice. New findings on bias-temperature instability
suggest approaches which may resolve some key problems.