MEASUREMENT AND ANALYSIS OF HYDROGEN DEPTH PROFILES IN MOS-STRUCTURESBY USING THE N-15 NUCLEAR-REACTION METHOD

The application of the H-1(N-15, alpha gamma)C-12 nuclear reaction ana lysis method promises to become the preferred measurement tool for hyd rogen depth profiling in solids. A depth resolution of approximately 5 nm in the near surface region and a sensitivity < 50 ppma makes it th e best choice for the analysis of thin films such as the metal-oxide-s ilicon system in semiconductor research. The experimental setup for de pth profiling at the authors' laboratory, which wail recently improved , is presented and its main features are highlighted. The recorded mea surement data need to undergo a deconvolution procedure which is solve d by the use of a computer program. Hydrogen depth profiles of aluminu m and poly-Si gate metal-oxide-silicon capacitors are presented to sho w the usefulness of this deconvolution. Applying physically justifiabl e parameters, a deeper insight at the important interface region is po ssible.