ELECTRICAL-PROPERTIES OF HYDROGEN-RICH SI SIO2 STRUCTURES/

Authors
DANESH P SZEKERES A
Citation
P. Danesh et A. Szekeres, ELECTRICAL-PROPERTIES OF HYDROGEN-RICH SI SIO2 STRUCTURES/, Journal of non-crystalline solids, 187, 1995, pp. 270-272
Citations number
11
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
187
Year of publication
1995
Pages
270 - 272
Database
ISI
SICI code
0022-3093(1995)187:<270:EOHSSS>2.0.ZU;2-H
Abstract
The electrical properties of Si/SiO2 interfaces grown by oxidation of a-Si:H films are studied using quasistatic and high frequency capacita nce-voltage measurements. The results obtained point out that the pres ence of hydrogen in the ambient and in the oxidizing film leads to an increase in the density of the interface states. This effect is sugges ted to be similar to postoxidation hydrogenation.