PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION FOR THIN-FILM-TRANSISTOR APPLICATIONS

The characteristics of silicon nitride films deposited in a multiproce ss reactor have been investigated to determine the most suitable layer s for dielectric and passivation applications. Process parameters such as rf power, temperature and gas flow ratios have been varied to cont rol the stoichiometry of the films, and associated parameters such as refractive index, BHF etch rate, relative permittivity and breakdown f ield. Using these results, silicon nitride films with favourable chara cteristics have been deposited and used successfully in thin film tran sistors.