ELECTRICAL-PROPERTIES OF AU BN INP MIS DIODES

Capacitance-voltage characteristics of metal-insulator-semiconductor s tructures of boron nitride on InP have been investigated. The measurem ents show an overall good capacitance modulation. In accumulation,the frequency dependence of the capacitance of these diodes is consistentl y attributed to tunneling-related trapping. Bias-temperature-stress (B TS) measurements are used to evaluate the density and sign of the ions which are mobile at 400 K. BTS measurements at 300 K show effects mai nly attributed to electron injection from the InP into traps located i n the insulator near the interface.