Thin TiO2 films were grown with a new solid titanium pyrazolylborate p
recursor by thermal metal organic chemical vapour deposition (MOCVD) i
n a temperature range of 300-800 degrees C. Previous differential ther
mal analysis/thermogravimetric measurements have shown that this precu
rsor is suitable for reduced pressure MOCVD, systems. The amorphous ch
aracter of the films deposited on quartz, sapphire, and Si [100] subst
rates was proven by X-ray diffraction. Oxygen and ammonia were used as
reaction gases.