INVESTIGATION OF THE FILM GROWTH OF A NEW TITANIUM PRECURSOR FOR MOCVD

Citation
Fr. Lang et al., INVESTIGATION OF THE FILM GROWTH OF A NEW TITANIUM PRECURSOR FOR MOCVD, Journal of non-crystalline solids, 187, 1995, pp. 430-434
Citations number
16
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
187
Year of publication
1995
Pages
430 - 434
Database
ISI
SICI code
0022-3093(1995)187:<430:IOTFGO>2.0.ZU;2-0
Abstract
Thin TiO2 films were grown with a new solid titanium pyrazolylborate p recursor by thermal metal organic chemical vapour deposition (MOCVD) i n a temperature range of 300-800 degrees C. Previous differential ther mal analysis/thermogravimetric measurements have shown that this precu rsor is suitable for reduced pressure MOCVD, systems. The amorphous ch aracter of the films deposited on quartz, sapphire, and Si [100] subst rates was proven by X-ray diffraction. Oxygen and ammonia were used as reaction gases.