LIGHT-ASSISTED DEPOSITION OF SILICON-BASED DIELECTRICS FOR OPTICAL INTERCONNECTION IN OPTOELECTRONICS

The structural quality of rapid thermal chemical vapour deposited diel ectric films have been utilized to fabricate optical waveguides at 1.5 mu m. The guides composed of SiOxNy guiding layer sandwiched between two SiO2 layers. A precise model has been utilized to define the index es of refraction and thicknesses of the different layers. Special care has been made in the fabrication process to define the entrance and e xit facets of the guide. A resulting loss of 1.5 dB/cm has been measur ed in this structure. This result is among the lowest losses reported on as-deposited dielectric guides.