LOW AND HIGH-TEMPERATURE UNIAXIAL-STRESS DEVICES FOR THE STUDY OF FERROELASTIC CRYSTALS

Citation
E. Burkhardt et al., LOW AND HIGH-TEMPERATURE UNIAXIAL-STRESS DEVICES FOR THE STUDY OF FERROELASTIC CRYSTALS, Review of scientific instruments, 66(7), 1995, pp. 3888-3893
Citations number
24
Categorie Soggetti
Physics, Applied","Instument & Instrumentation
ISSN journal
00346748
Volume
66
Issue
7
Year of publication
1995
Pages
3888 - 3893
Database
ISI
SICI code
0034-6748(1995)66:7<3888:LAHUDF>2.0.ZU;2-B
Abstract
Detailed techniques for the construction of low (4-300 K) and high (30 0-700 K) temperature uniaxial stress application devices are described , designed for studying stress-induced effects, including ferroelastic (/ferroelectric) detwinning, induced phase transitions, piezo-optical effects in ferroic crystals under in situ optical control of their do main states by means of polarized light microscopy. Examples of the su ccessful application of these systems to YBa2Cu3O7-delta, K3Fe5F15, an d Cr3B7O13Cl crystals are presented and discussed. (C) 1995 American I nstitute of Physics.