DEVICES REACH NEW POWER LEVELS IN SATELLITE BANDS

SOLID-STATE power is the key to long-term reliability in a wide range of communications systems. In both microwave radars and satellite-comm unications systems that switch from electron tubes to GaAs FET based a mplifiers, the active devices must perform with high efficiency and lo w power consumption. To meet the needs of these systems, Toshiba Ameri ca Electronic Components,Inc, (Irvine, CA) has developed a line of int ernally-matched C-band GaAs FET devices with power-added efficiency as high as 41 percent.