SI-C-H BONDING IN AMORPHOUS SI1-XCX-H FILM SUBSTRATE INTERFACES DETERMINED BY REAL-TIME INFRARED-ABSORPTION DURING REACTIVE MAGNETRON SPUTTER-DEPOSITION/

We determine the evolution of Si-H and C-H bonding during the growth o f hydrogenated amorphous silicon carbide films by reactive magnetron s puttering of a Si target in (Ar+H-2+CH4). Si-H and C-H modes are obser ved by infrared reflectance spectroscopy. An optical cavity substrate is used to enhance the sensitivity. We identify Si-H stretching modes at 2110 and 2145 cm(-1) due to Si-H clusters in microvoids and Si-H ba ck-bonded to carbon, respectively. C-H stretching modes are identified at 2870, 2900, and 2950 cm(-1). These indicate dominant sp(3) bonding configuration for C. During initial growth, a transition layer rich i n H and C is observed. Steady state growth is not achieved until >250 Angstrom on SiO2 substrates, and similar to 70 Angstrom on alpha-Si:H substrates. (C) 1995 American Institute of Physics.