TEMPERATURE-DEPENDENCE OF THE BIAXIAL MODULUS, INTRINSIC STRESS AND COMPOSITION OF PLASMA-DEPOSITED SILICON OXYNITRIDE FIRMS

Silicon oxynitride films were deposited by plasma-enhanced chemical-va por deposition. The elemental composition was varied between silicon n itride and silicon dioxide: SiO0.3N1.0, SiO0.7N1.6, SiO0.7N1,1, and Si O1.7N0.5. These films were annealed in air, at temperatures of 40-240 degrees C above the deposition temperature (260 degrees C), to determi ne the stability and behavior of each composition. The biaxial modulus , biaxial intrinsic stress, and elemental composition were measured at discrete intervals within the annealing cycle. Films deposited from p rimarily ammonia possessed considerable hydrogen (up to 38 at. %) and lost nitrogen and hydrogen at anneal temperatures (260-300 degrees C) only marginally higher than the deposition temperature. As the initial oxygen content increased a different mechanism controlled the behavio r of the film: The temperature threshold for change rose to similar or equal to 350 degrees C and the loss of nitrogen was compensated by an equivalent rise in the oxygen content. The transformation from silico n oxynitride to silica was completed after 50 h at 400 degrees C. The initial biaxial modulus of all compositions was 21-30 GPa and the intr insic stress was -30 to 85 MPa. Increasing the oxygen content raised t he temperature threshold where cracking first occurred; the two film c ompositions with the highest initial oxygen content did not crack, eve n at the highest temperature (450 degrees C) investigated. At 450 degr ees C the biaxial modulus increased to similar or equal to 100 GPa and the intrinsic stress was similar or equal to 200 MPa. These increases could be correlated with the observed change in the him's composition . When nitrogen was replaced by oxygen, the induced stress remained lo wer than the biaxial strength of the material, but, when nitrogen and hydrogen were lost, stress-relieving microcracking occurred. (C) 1995 American Institute of Physics.