X-RAY REFLECTIVITY STUDIES OF THE EFFECT OF SURFACTANT ON THE GROWTH OF GESI SUPERLATTICES

X-ray reflectivity is applied to investigate the effect of a surfactan t on the growth of Ge1-xSix/Si superlattices. It is demonstrated that the antimony layer deposited on the surface can effectively prevent th e intermixing of silicon and germanium. The specular reflectivity curv es show that the width of the interface is sufficiently reduced by the surfactant. The transverse scans show that the interface roughening e xponent h for the sample with surfactant is larger than for the sample without surfactant, and the in-plane correlation length for the forme r is much larger than far the latter. This indicates that the surfacta nt makes less jagged and smoother interfaces and induces a different s urface growth mode. (C) 1995 American institute of Physics.