CATHODOLUMINESCENCE CHARACTERIZATION OF GE-DOPED CDTE CRYSTALS

Cathodoluminescence (CL) microscopic techniques have been used to stud y the spatial distribution of structural defects and the deep levels i n CdTe:Ge bulk crystals. The effect of Ge doping with concentrations o f 10(17) and 10(19) cm(-3) on the compensation of V-Cd in CdTe has bee n investigated. Dependence of the intensity distribution of CL emissio n bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminesc ence, which is often present in undoped CdTe crystals, and enhances th e 0.91 and 0.81 eV emissions. (C) 1995 American Institute of Physics.