Gg. Qin et al., VISIBLE ELECTROLUMINESCENCE FROM SEMITRANSPARENT AU FILM EXTRA THIN SI-RICH SILICON-OXIDE FILM P-SI STRUCTURE, Journal of applied physics, 78(3), 1995, pp. 2006-2009
Visible electroluminescence (EL) has been reported from semitransparen
t Au film/extra thin Si-rich silicon oxide film/p-Si diodes at room te
mperature. The Si-rich silicon oxide films, with thickness of about 40
Angstrom, were grown using the magnetron sputtering technique. At for
ward bias of 4 V, EL spectra with peak energy of 1.9 eV and full width
at half maximum of 0.5 eV can be observed from diodes with such extra
thin Si-rich oxide films having not been annealed. EL peak energy sho
ws a small red shift under low forward bias but does not shift again w
hen increasing the bias further. Annealing at 800 degrees C, EL spectr
a widen and show several shoulders at about 1.5, 2.2, and 2.4 eV, and
the EL peak energy shows blue shift with increasing forward bias. Thes
e results are shown to be consistent with light emission at several ty
pes of luminescence centers in the Si-rich silicon oxide films. (C) 19
95 American Institute of Physics.