ION-BEAM VAPOR-DEPOSITION FOR SI EPITAXY AT LOW SUBSTRATE TEMPERATURES

We report the results of an investigation to grow thin Si films on Si substrates at low substrate temperatures using ionized SiH4 gas genera ted with a Kaufman type ion gun. This investigation shows island-growt h at higher substrate temperatures (500-700 degrees C) in the form of square-based pyramids. By lowering the substrate temperature to 300 de grees C, we were able to achieve a planar growth with a growth rate of 8 Angstrom per minute. Transmission electron microscopy (TEM) is used to study the crystalline quality of the samples prepared at different temperatures. The study by high resolution TEM of the sample grown at 300 degrees C indicates the presence of microtwins in the Si epi-laye r. (C) 1995 American Institute of Physics.